Magnachip Semiconductor Corporation (NYSE:MX, "Magnachip"))) today announced the expansion of its power semiconductor portfolio with 15 new sixth-generation (Gen6) E6 super-junction (SJ) MOSFETs for consumer and computing power applications.

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As consumer and computing systems deliver higher performance in increasingly compact form factors, power designers need to manage efficiency, thermal performance, switching noise and PCB space simultaneously. Voltage ratings, on-resistance values and package requirements also vary according to system power levels and PCB design constraints, making MOSFET selection increasingly important.

The new E6 Series addresses these challenges with a balanced combination of thermal, switching and EMI performance. The MOSFETs are designed to help manage switching losses and oscillation while supporting design margin for voltage transients and avalanche conditions. These characteristics can help designers reduce thermal stress and switching noise in compact power designs while maintaining margin for normal operating and transient conditions.

Magnachip tested its 600 V, 280 mΩ E6 MOSFET in a TO-220SFA package in the power factor correction (PFC) stage of a TV switch-mode power supply (SMPS). At a 100 Vac input and under the same test conditions, the E6 MOSFET operated at approximately 5.3% lower temperature than Magnachip’s previous-generation MOSFET. This result indicates the potential of the E6 Series to offer additional thermal design margin in comparable PFC circuits.

The E6 Series includes 500 V and 600 V MOSFETs. The 600 V lineup offers DPAK (TO-252), TO-220FA and TO-220SFA packages across key on-resistance classes, allowing designers to choose from a range of MOSFET options to better align with their thermal and PCB mounting requirements while achieving the required Rds (on) rating.