Global DRAM revenue surged to a record $97 billion in the first quarter of 2026 as booming AI data center demand and sharply higher memory prices fueled explosive growth across the semiconductor industry, according to Counterpoint Research.

The market expanded 80% quarter over quarter and 260% year over year during the period. The firm said rising adoption of High Bandwidth Memory, or HBM, and increased LPDDR5 content in AI infrastructure were major drivers behind the surge.

Samsung Extends Lead Over Rivals

Samsung Electronics Co. Ltd. (OTC:SSNLF) widened its lead in the global DRAM market with a 38% share in the quarter, ahead of SK Hynix Inc., after reclaiming the top position in late 2025.

Micron Technology Inc. (NASDAQ:MU) remained the third-largest DRAM supplier and maintained its market share in the first quarter of 2026. Counterpoint Research said Micron has been aggressively expanding production capacity to meet accelerating AI-driven demand.

The report also highlighted rapid gains by China-based CXMT, which benefited from rising domestic demand for DRAM chips used in smartphones and servers.

CXMT's revenue surged more than 700% year over year, making it the fastest-growing DRAM supplier globally. Its market share more than doubled to 8%, strengthening its position as the world's fourth-largest DRAM supplier.

Counterpoint added that CXMT is preparing for a potential initial public offering to fund additional DRAM capacity and expand into the AI-focused HBM market.

DRAM Prices Seen Rising Again in Q2

According to Counterpoint Research's Monthly Memory Price Tracker, DRAM prices continued climbing during the quarter and are expected to rise another 50% sequentially in the second quarter of 2026, including both HBM and commodity DRAM products.

The research firm said Samsung and Micron are moving aggressively to expand capacity and strengthen their positions in next-generation memory technology as competition intensifies. Counterpoint projects the overall DRAM market will grow more than 300% in 2026.

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